SSF26NS60A Datasheet | Silikron Semiconductor

Features and Benefits - High dv/dt and avalanche capabilities - 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance       Description The SSF26NS60A series MOSFETs is a new technology, which bines an innovative technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.   Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=13.8m H Avalanche Current @ L=13.8m H Operating Junction and Storage Temperature Range Max. 20 13 80 208 1.66 600 ± 30 248 6 -55 to + 150 Units W W/°C V V m J A °C ©Silikron Semiconductor CO.,LTD. 2014.3.27 .silikron.  Version : 1.0 page 1 of 8                                  Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Typ. - - Max. 0.6 62 Units °C/W °C/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown...