SSF3036C Datasheet | Silikron Semiconductor

Main Product Characteristics: NMOS PMOS VDSS 30V -30V RDS(on) 32.4mohm 61.6mohm ID 4A -3.6A Features and Benefits: - Advanced Process Technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery - 150℃ operating temperature DFN 3x2-8L Bottom View N-Channel Mosfet P-Channel Mosfet Schematic diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable device for use...