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SSF3036C - MOSFET

General Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • Advanced Process Technology.
  • Special designed for PWM, load switching and general purpose.

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Datasheet Details

Part number SSF3036C
Manufacturer Silikron Semiconductor
File Size 362.22 KB
Description MOSFET
Datasheet download datasheet SSF3036C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Main Product Characteristics: NMOS PMOS VDSS 30V -30V RDS(on) 32.4mohm 61.6mohm ID 4A -3.6A Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF3036C DFN 3x2-8L Bottom View N-Channel Mosfet P-Channel Mosfet Schematic diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.