SSF3339 Datasheet | Silikron Semiconductor

Features and Benefits: - Advanced MOSFET process technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery - 150℃ operating temperature Marking and pin Assignment Schematic diagram Description : It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute max Rating: @TA=25℃ unless otherwise specified Symbol ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. -4.1 ① -3.5 ① -20 1.4 -30 ± 20 -55 to +150 Units W V V °C Thermal Resistance Symbol RθJA Characterizes Junction-to-ambient (t ≤ 10s) ④ ©Silikron Semiconductor CO.,LTD. 2013.03.01 .silikron. Typ. - Max. 90 Units °C /W Version : 1.1 page 1 of 8 Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Qg Total gate charge Qgs Gate-to-Source charge Qgd Gate-to-Drain("Miller") charge td(on) Turn-on delay time tr Rise time td(off) Turn-Off delay time tf Fall...