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SSF4604 - MOSFET

General Description

The SSF4604 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge.

The complementary MOSFET may be used in power inverters, and other applications.

Key Features

  • N-Channel VDS = 30V,ID = 6.9A RDS(ON) < 44mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=10V.
  • P-Channel VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 52mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package N-channel P-channel Schematic diagram D1 D1 D2 D2 8 7 65 4604 1 2 34 S1 G1 S2 G2 Marking and pin Assignment SOP-8 top view.

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Datasheet Details

Part number SSF4604
Manufacturer Silikron Semiconductor
File Size 374.34 KB
Description MOSFET
Datasheet download datasheet SSF4604 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSF4604 DESCRIPTION The SSF4604 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. GENERAL FEATURES ●N-Channel VDS = 30V,ID = 6.9A RDS(ON) < 44mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=10V ●P-Channel VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.