SSPL2090 - N-Channel enhancement mode power field effect transistors

Silikron Semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

Key Features

Advanced MOSFET process technology.
Special designed for PWM, load switching and general purpose.

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SSPL2090 n-channel enhancement mode power field effect transistors by Silikron Semiconductor - Datasheet Preview

Datasheet Details

Part number	SSPL2090
Manufacturer	Silikron Semiconductor
File Size	475.19 KB
Description	N-Channel enhancement mode power field effect transistors
Datasheet	SSPL2090 Datasheet

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Main Product Characteristics: VDSS RDS(on) 200V 80mΩ(typ.) ID 30A TO220 Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature SSPL2090 Marking and pin Assignment Schematic diagram Description: These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.