SSPL4004 - N-Channel enhancement mode power field effect transistors

Description

These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

Features

Advanced Process Technology.
Special designed for PWM, load switching and general purpose.

Silikron Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	SSPL4004
Manufacturer	Silikron Semiconductor
File Size	624.35 KB
Description	N-Channel enhancement mode power field effect transistors
Datasheet	SSPL4004 Datasheet

📁 Similar Datasheet

SSPL4004 - N-Channel MOSFET (GOOD-ARK)
SSPL2015 - N-Channel MOSFET (GOOD-ARK)
SSPL2090 - N-Channel MOSFET (GOOD-ARK)
SSPL5505 - N-Channel MOSFET (GOOD-ARK)
SSPL5508 - N-Channel MOSFET (GOOD-ARK)
SSPL5508 - N-Channel 60V MOSFET (VBsemi)
SSPL6022 - N-Channel MOSFET (GOOD-ARK)
SSPL6040 - N-Channel MOSFET (GOOD-ARK)
SSPL7508 - N-Channel MOSFET (GOOD-ARK)
SSPL7509 - N-Channel MOSFET (GOOD-ARK)

Other Datasheets by Silikron Semiconductor

SSPL1010 - Schottky Barrier Rectifier
SSPL1022 - N-Channel enhancement mode power field effect transistors
SSPL1042 - N-Channel enhancement mode power field effect transistors
SSPL1090 - N-Channel enhancement mode power field effect transistors
SSPL2015 - N-Channel enhancement mode power field effect transistors
SSPL2015D - N-Channel enhancement mode power field effect transistors
SSPL2015F - N-Channel enhancement mode power field effect transistors
SSPL2090 - N-Channel enhancement mode power field effect transistors

Full PDF Text Transcription

Click to expand full text

Main Product Characteristics: VDSS 40V RDS(on) 3.9mohm(typ.) ID 180A ① Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature TO220 SSPL4004 Marking and pin Assignment Schematic diagram Description: These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Published: Sep 21, 2016 |