SSPL50N30H Datasheet | Silikron Semiconductor

Features and Benefits: TO-247 - Advanced MOSFET process technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery - 150℃ operating temperature Marking and Pin Schematic Diagram Assignment Description : It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V ① Continuous Drain Current, VGS @ 10V ① Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=60m H Avalanche Current @ L=60m H Operating Junction and Storage Temperature Range Max. 50 31 192 390 3.12 300 ± 30 4465 12.2 -55 to +150 Units W W/°C V V m J A °C ©Silikron Semiconductor CO.,LTD. 2014.07.09 .silikron. Version : 1.2 page 1 of 8 Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case ③ Junction-to-ambient (t ≤ 10s)④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ. - - - Max. 0.32 62 40 Units ℃/W ℃/W ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Qg Total gate...