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SSPL50N30H - N-Channel enhancement mode power field effect transistors

General Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • TO-247.
  • Advanced MOSFET process technology.
  • Special designed for PWM, load switching and general purpose.

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Datasheet Details

Part number SSPL50N30H
Manufacturer Silikron Semiconductor
File Size 464.73 KB
Description N-Channel enhancement mode power field effect transistors
Datasheet download datasheet SSPL50N30H Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Main Product Characteristics: VDSS RDS(on) 300V 45mΩ(typ.) ID 50A ① Features and Benefits: TO-247  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSPL50N30H Marking and Pin Schematic Diagram Assignment Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.