SSPL5505 - N-Channel enhancement mode power field effect transistors

Silikron Semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

Key Features

TO220.
Advanced Process Technology.
Special designed for PWM, load switching and general purpose.

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SSPL5505 n-channel enhancement mode power field effect transistors by Silikron Semiconductor - Datasheet Preview

Datasheet Details

Part number	SSPL5505
Manufacturer	Silikron Semiconductor
File Size	621.19 KB
Description	N-Channel enhancement mode power field effect transistors
Datasheet	SSPL5505 Datasheet

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Main Product Characteristics: VDSS 55V RDS(on) 4.5mohm(typ.) ID 160A ① Features and Benefits: TO220  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature SSPL5505 Marking and pin Assignment Schematic diagram Description: These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.