Datasheet Details
| Part number | SSPL6022 |
|---|---|
| Manufacturer | Silikron Semiconductor |
| File Size | 616.59 KB |
| Description | N-Channel enhancement mode power field effect transistors |
| Datasheet | SSPL6022-SilikronSemiconductor.pdf |
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Overview: Main Product Characteristics: VDSS 60V RDS(on) 20mohm(typ.) ID.
| Part number | SSPL6022 |
|---|---|
| Manufacturer | Silikron Semiconductor |
| File Size | 616.59 KB |
| Description | N-Channel enhancement mode power field effect transistors |
| Datasheet | SSPL6022-SilikronSemiconductor.pdf |
|
|
|
: These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
These devices are well suited for high efficiency switch mode power supplies Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=5.6mH Avalanche Current @ L=5.6mH Operating Junction and Storage Temperature Range Max.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
SSPL6022 | N-Channel MOSFET | GOOD-ARK |
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