Datasheet Summary
Main Product Characteristics:
VDSS
75V
RDS(on) 6.25mohm(typ.)
ID 120A ①
Features and Benefits:
- Advanced Process Technology
- Special designed for PWM, load switching and general purpose applications
- Ultra low on-resistance with low gate charge
- Fast switching and reverse body recovery
- 175℃ operating temperature
TO220
Marking and pin Assignment
Schematic diagram
Description:
These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the...
