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SSS1004A7 - N-Channel enhancement mode power field effect transistors

General Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • TO-263-7L.
  • Advanced Process Technology.
  • Special designed for PWM, load switching and general purpose.

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Datasheet Details

Part number SSS1004A7
Manufacturer Silikron Semiconductor
File Size 338.01 KB
Description N-Channel enhancement mode power field effect transistors
Datasheet download datasheet SSS1004A7 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Main Product Characteristics VDSS RDS(on) 100V 3.0mΩ (typ.) ID 180A ① Features and Benefits TO-263-7L  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature SSS1004A7 1, Gate 2~3,5~7 Source 4,8 Drain Pin Assignment Schematic diagram Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.