SSS1004A7 Datasheet | Silikron Semiconductor

Features and Benefits TO-263-7L - Advanced Process Technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery - 175℃ operating temperature 1, Gate 2~3,5~7 Source 4,8 Drain Pin Assignment Schematic diagram Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3m H Avalanche Current @ L=0.3m H Operating Junction and Storage Temperature Range Max. 180 ① 130 ① 670 375 2.5 100 ± 20 1045 83.5 -55 to +175 Units W W/°C V V m J A °C ©Silikron Semiconductor CO.,LTD. 2014.04.18 .silikron. Version : 1.2 page 1 of 7 Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ. - - - Max. 0.4 62 40 Units °C/W °C/W °C/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Qg Total gate...