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SSTS20L100CT Datasheet Schottky Barrier Rectifier

Manufacturer: Silikron Semiconductor

Overview: SSTS20L100CT/CTF Main Product Characteristics: IF VRRM Tj(max) Vf(max) 2×10A 100V 150℃ 0.

General Description

: Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors;

this product special design for high forward and reverse surge capability Absolute Rating: Symbol Characterizes VRRM Peak Repetitive Reverse Voltage VR(RMS) IF(AV) RMS Reverse Voltage Average Forward Current Per diode Per device IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) IRRM Peak Repetitive Reverse Surge Current(Tp=2us) TJ Maximum operation Junction Temperature Range Tstg Storage Temperature Range Value 100 70 10 20 200 0.5 -55~150 -55~150 Unit V V A A A A ℃ ℃ Thermal Resistance Symbol Characterizes RθJC Maximum Thermal Resistance Junction To RθJC Case(per leg) TO220 TO220F Value 2.3 5.3 Unit ℃/W ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Characterizes Min Typ Max Unit VR Reverse Breakdown Voltage 100 V VF Forward Voltage Drop 0.7 V 0.6 IR Leakage Current 0.1 mA 20 Test Condition IR=0.5mA IF=10A, TJ=25℃ IF=10A, TJ=125℃ VR=100V, TJ=25℃ VR=100V, TJ=125℃ ©Silikron Semiconductor CO., LTD.

2012.8.20 .silikron.

Key Features

  • High Junction Temperature.
  • High ESD Protection.
  • High Forward & Reverse Surge capability TO220F SSTS20L100CTF Schematic Diagram.

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