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2N7002K2 - MOSFET

General Description

It utilizes the advanced trench processing techniques to achieve extremely low on resistance and low gate charge.

Key Features

  • Advanced trench MOSFET process technology.
  • Special designed for PWM, load switching and general purpose.

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Datasheet Details

Part number 2N7002K2
Manufacturer Silikron
File Size 653.04 KB
Description MOSFET
Datasheet download datasheet 2N7002K2 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Main Product Characteristics: VDSS 60V RDS(on) 2Ω (typ.) ID 0.27A SOT-23 Features and Benefits:  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  High Power and current handing capability  Fully Avalanche Rated  ESD Protection HBM ≥ 2KV 2N7002K2 Marking and pin Assignments Schematic Diagram Description: It utilizes the advanced trench processing techniques to achieve extremely low on resistance and low gate charge. These features combine to make this design an extremely efficient and reliable device for use in PWM, load switching and a wide variety of other applications.