SMG065N64E1
SMG065N64E1 is IGBT manufactured by Silikron.
Features and Benefits:
- Trench FS technology offering
- High speed switching
- Low gate charge and VCE(sat)
- High ruggedness, temperature stable behavior
- Maximum junction temperature 175°C
Applications:
- Solar Inverters
- Uninterruptible power supplies
- Motor drives
- Air condition
Schematic Diagram
Absolute Max Rating:
Symbol
Parameter
Value
VCES VGES IC ICpuls IF IFM PD TJ TSTG TL
Collector-Emitter Voltage Gate- Emitter Voltage Collector Current Collector Current @TC = 100 °C Pulsed Collector Current，tp limited by Tjmax Turn off safe operating area，VCE=650V，TJ=175°C Diode Continuous Forward Current @TC = 25 °C Diode Continuous Forward Current @TC = 100 °C Diode Maximum Forward Current Power Dissipation @ TC = 25°C Power Dissipation @ TC = 100°C Operating Junction and Storage Temperature Range Maximum Temperature for Soldering
700 ±30 120
60 240 240 120 60 240 319 159 -55 to +175 260
©Silikron Microelectronics (Suzhou) Co.,Ltd
.silikron. Version: Preliminary
Units V V
W W °C °C page 1 of
Thermal Resistance
Symbol RθJC RθJA
Characterizes Thermal Resistance,Junction-to-case for IGBT Thermal Resistance,Junction-to-case for Diode Thermal Resistance,Junction-to-ambient
Typ.
- -
- Max. 0.47 0.98 40
Units °C/W °C/W °C/W
Electrical Characteristics @TA=25°C unless otherwise specified
Symbol Parameter V(BR)CES Collector-Emitter Breakdown Voltage
VCE(sat) Collector-Emitter Saturation Voltage
VGE(th) ICES
Gate Threshold Voltage Collector-Emitter Leakage...
