SMG120NA0EF Datasheet | Silikron

Features and Benefits: - Trench FS technology offering - High speed switching - Low gate charge and VCE(sat) - High ruggedness, temperature stable behavior - Maximum junction temperature 175°C Applications: - Solar inverters - Uninterruptible power supplies - Motor drives - Air condition G:Gate E:Emitter K:Kelvin Emitter C:Collector Schematic Diagram Absolute Max Rating: Symbol VCES VGES ICpuls IF IFM TJ TSTG TL Parameter Collector-Emitter Voltage Gate- Emitter Voltage Collector Current Collector Current @TC = 100 °C Pulsed Collector Current，tp limited by Tjmax Turn off safe operating area，VCE=1200V，TJ=175°C Diode Continuous Forward Current @TC = 100 °C Diode Maximum Forward Current Power Dissipation @ TC = 25°C Power Dissipation @ TC = 100°C Operating Junction and Storage Temperature Range Maximum Temperature for Soldering Value 1250 ±30 200 100 400 400 100 400 750 376 -55 to +175 260 Units V V W W °C °C ©Silikron Microelectronics (Suzhou) Co.,Ltd .silikron. Version: 1.0 page 1 of 6 Thermal Resistance Symbol RθJC RθJA Characterizes Thermal Resistance,Junction-to-case for IGBT Thermal Resistance,Junction-to-case for Diode Thermal Resistance,Junction-to-ambient Typ. - - - Max. 0.2 1.4 40 Units °C/W °C/W °C/W Electrical Characteristics @TA=25°C unless otherwise specified Symbol Parameter V(BR)CES Collector-Emitter Breakdown Voltage VCE(sat) Collector-Emitter Saturation Voltage VGE(th) ICES Gate Threshold Voltage Collector-Emitter Leakage Current IGES Gate to Emitter Reverse...