• Part: SMI120N75E21
  • Description: IGBT
  • Manufacturer: Silikron
  • Size: 2.01 MB
Download SMI120N75E21 Datasheet PDF
Silikron
SMI120N75E21
Features and Benefits: - 247- 4L - High blocking voltage with low on-resistance - High speed switching,very low switching losses - High blocking voltage with low on-resistance - Fast intrinsic diode with low reverse recovery (Qrr) - Temperature independent turn-off switching losses Applications: - On-board charger/PFC - EV battery chargers - Booster/DC-DC converter - Switch mode power supplies Absolute Max Rating: Symbol VDS VGS,max VGS,op ID(puls) PD TJ TSTG TL Parameter Drain Source Voltage Gate Source Voltage,Absolute Maximum Values Gate Source Voltage,Remended Operational Values Continuous Drain Current @TC = 25 °C Continuous Drain Current @TC = 100 °C Pulsed Drain Current,Pulse Width t P limited by Tj,max Power Dissipation @TC = 25˚C, TJ = 175˚C Operating Junction and Storage Temperature Range Soldering Temperature Schematic Diagram Value 1200 -8 /+22 -4 /+18 38 27 80 214 -55 to +175 260 Units V V V W °C °C ©Silikron Microelectronics (Suzhou)...