SMT002NA4G1 Datasheet | Silikron

Features and Benefits - Advanced MOSFET process technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery Schematic Diagram Description : It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol ID @ TA = 25°C ID @ TA = 100°C IDM PD @TA = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. 1 0.7 4 0.23 20 ± 10 -55 to +150 Units W V V °C Silikron Microelectronics (Suzhou) Co.,Ltd .silikron. Version : Preliminary page 1 of 5 Thermal Resistance Symbol RθJA Characterizes Junction-to-Ambient④ Typ. - Max. 543 Units ℃/W Electrical Characteristics @TJ=25℃unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Min. 20 - - 0.4 - - - - - - - - - - - -...