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SSF1009 - MOSFET

General Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • TO220.
  • Advanced MOSFET process technology.
  • Special designed for PWM, load switching and general purpose.

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Datasheet Details

Part number SSF1009
Manufacturer Silikron
File Size 632.06 KB
Description MOSFET
Datasheet download datasheet SSF1009 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Main Product Characteristics: VDSS 100V RDS(on) 7.2mohm(typ.) ID 100A Features and Benefits: TO220  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature SSF1009 Marking and pin Assignment Schematic diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.