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SSF1221J2 - MOSFET

General Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • Advanced trench MOSFET process technology.
  • Special designed for battery charge, load switching in cellular handset and general ultraportable.

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Datasheet Details

Part number SSF1221J2
Manufacturer Silikron
File Size 363.50 KB
Description MOSFET
Datasheet download datasheet SSF1221J2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Main Product Characteristics: VDSS -12V RDS(on) 14.4 mΩ(typ.) ID -12A DFN2x2-6L Pin Assignment SSF1221J2 Schematic diagram Features and Benefits:  Advanced trench MOSFET process technology  Special designed for battery charge, load switching in cellular handset and general ultraportable applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.