SSF13R6 Datasheet | Silikron

Features and Benefits: - Advanced trench MOSFET process technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery - 150℃ operating temperature Description : It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Absolute max Rating: Symbol ID @ TC = 25°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V ① Pulsed Drain Current ② Power Dissipation ③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. 0.17 0.68 225 100 ± 20 -55 to + 150 Units A m W V V °C Thermal Resistance Symbol RθJA Characterizes Junction-to-ambient (t ≤ 10s) ④ ©Silikron Microelectronics (Suzhou) Co.,Ltd .silikron. Typ. - Max. 556 Version : Preliminary Units ℃/W page 1 of 6 Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current IGSS Gate-to-Source forward leakage td(on) Turn-on delay time td(off) Turn-Off delay time Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Min. 100 - 0.8 - - - -...