Silikron SSF2300P
MOSFET
FEATURES AND BENEFITS
● Advanced MOSFET process technology● Special designed for PWM, load switching and general purpose applications
● Ultra low on-resistance with low gate charge
● Fast switching and reverse body recovery
● 150℃ operating temperature SSF2300P Marking and Pin Assignments Schematic Diagram
DESCRIPTION
: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol ID @ TC = 25°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. 3 11 1.35 20 ± 12 -55 to +150 Units A W V V °C ©Silikron Microelectronics (Suzhou) Co.,Ltd Version:1.0 page1of6 Thermal Resistance Symbol RθJA Characterizes Junction-to-Ambient④ SSF2300P Typ. — Max.