SSF2429UP
SSF2429UP is MOSFET manufactured by Silikron.
Main Product Characteristics:
VDSS
-20V
RDS(on) 29 mΩ(typ.)
-5A
Features and Benefits:
SOT23-6
- Advanced trench MOSFET process technology
- Special designed for PWM, load switching and general purpose applications
- Ultra low on-resistance with low gate charge
- Fast switching and reverse body recovery
- 150℃ operating temperature
Marking and Pin Assignment
S Schematic Diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute Max Rating:
Symbol ID @ TC = 25°C IDM PD @TC = 25°C VDS VGS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range
Max. -5 -20 1.4 -20
± 12 -55 to +150
Units
W V V °C
Thermal Resistance
Symbol RθJA
Characterizes Junction-to-ambient (t ≤ 10s)④
Typ.
- Max. 90
Units ℃/W
©Silikron Microelectronics (Suzhou)...
