Datasheet Summary
Main Product Characteristics:
VDSS
30V
RDS(on) 1ohm(typ.)
ID 0.5A①
SOT23
Features andBenefits:
- Advanced trench MOSFET process technology
- Special designed for PWM, load switching and general purpose applications
- Ultra low on-resistance with low gate charge
- Fast switching and reverse body recovery
- 150℃ operating temperature
- ESD Protected, HBM 1KV
Marking and pin Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniquesto achieve the high cell density and reduces the on-resistance with high repetitiveavalanche rating. These Features bine to makethis design an extremely efficient and reliable devicefor use in power...