SSF3341UP Datasheet | Silikron

Features and Benefits - Advanced MOSFET process technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery - 150℃ operating temperature Marking and Pin Assignments Schematic Diagram Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V ① Continuous Drain Current, VGS @ 10V ① Pulsed Drain Current ② Power Dissipation ③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. -4.2 -3.5 -30 1.4 -30 ±12 -55 to +150 Units W V V °C Thermal Resistance Symbol RθJA Characterizes Junction-to-ambient (t ≤ 10s) ④ Typ. - Max. 90 Units °C /W ©Silikron Microelectronics (Suzhou) Co.,Ltd .silikron. Version : 1.0 page 1 of 7 Electrical Characterizes Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) IDSS Gate threshold voltage Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Qg Total gate charge Qgs Gate-to-Source charge Qgd Gate-to-Drain("Miller") charge...