SSF3400K
Features and Benefits:
Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
Schematic Diagram
Description
:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V ① Continuous Drain Current, VGS @ 10V ① Pulsed Drain Current ② Power Dissipation Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range
Max. 5.8 4.2 30 1.4 30 ± 12 -55 to + 150
Units
W V V °C
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