Description
The SSF4N60 is a new generation of high voltage N
Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior sw
Features
- Extremely high dv/dt capability.
- Low Gate Charge Qg results in Simple Drive Requirement.
- 100% avalanche tested.
- Gate charge minimized.
- Very low intrinsic capacitances.
- Very good manufacturing repeatability
Vdss = 600V Id = 4A Rdson = 2.3Ω (typ. ).
SSF4N60 Datasheet
