SSFD4031L
Features and Benefits:
- Advanced MOSFET process technology
- Special designed for PWM, load switching and general purpose applications
- Ultra low on-resistance with low gate charge
- Fast switching and reverse body recovery
- 100%Avalanche Rated
TO-252
Pin Assignments Schematic Diagram
Description
:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute Max Rating:
Symbol ID @ TC = 25℃ ID @ TC = 100℃ IDM PD @TC = 25℃ PD @TA = 25℃ VDS VGS EAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.1m H Operating Junction and...
