Silikron SSFD6035
MOSFET
| Part No. | SSFD6035 |
|---|---|
| Datasheet | SSFD6035 Download |
| Manufacturer |  Silikron |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
:● Advanced MOSFET process technology
● Special designed for PWM, load switching and general purpose applications
● Ultra low on-resistance with low gate charge
● Fast switching and reverse body recovery
● 150℃ operating temperature SSFD6035 Marking and Pin Assignments Schematic Diagram
DESCRIPTION
: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol ID @ TC = 25°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. -26 -60 60 -60 ± 20 -55 to +150 Units A W V V °C ©Silikron Microelectronics (Suzhou) Co.,Ltd Version : 2.1 page 1 of 5 Thermal Resistance Symbol RθJA Characteristics Thermal Resistance,Junction-to-Ambient④ SSFD6035 Typ. — Max.
