SSFD6046X
Features and Benefits:
- Advanced MOSFET process technology
- Special designed for PWM, load switching and general purpose applications
- Ultra low on-resistance with low gate charge
- Fast switching and reverse body recovery
- 150℃ operating temperature
Marking and Pin Assignments
Schematic Diagram
Description
:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating:
Symbol ID @ TC = 25°C IDM PD @TC = 25°C VDS VGS EAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.5m H Operating Junction and Storage Temperature Range
Max. 20 80 27.7 60 ± 20 34
-55 to +150
Units
W V V...
