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XT6N60 - 600/650 Volts N-CHANNEL MOSFET

Description

The XT6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

  • s.
  • RDS(ON) = 1.5Ω @VGS = 10V.
  • Ultra low gate charge (typical 20 nC ).
  • Low reverse transfer Capacitance ( CRSS = typical 10pF ).
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • Package.
  • TO-220 2.Drain 1.Gate 3.Source.
  • Ordering Information XT6N60 ①②③④ Designator ① ② ③ Represents Lead Planting Drain-Source Voltage Package Type ④ Packing Type.
  • Pb-free plating product number: 6N60L Symbol L A/B T.

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Datasheet preview – XT6N60

Datasheet Details

Part number XT6N60
Manufacturer Silinktek
File Size 469.59 KB
Description 600/650 Volts N-CHANNEL MOSFET
Datasheet download datasheet XT6N60 Datasheet
Additional preview pages of the XT6N60 datasheet.

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    6.2 Amps, 600/650 Volts N-CHANNEL MOSFET XT6N60 ■ Description The XT6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. ■ Features  RDS(ON) = 1.5Ω @VGS = 10V  Ultra low gate charge (typical 20 nC )  Low reverse transfer Capacitance ( CRSS = typical 10pF )  Fast switching capability  Avalanche energy tested  Improved dv/dt capability, high ruggedness ■ Package  TO-220 2.Drain 1.Gate 3.
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