XT6N60 Datasheet | Silinktek

Description The XT6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. - Features - RDS(ON) = 1.5Ω @VGS = 10V - Ultra low gate charge (typical 20 n C ) - Low reverse transfer Capacitance ( CRSS = typical 10p F ) - Fast switching capability - Avalanche energy tested - Improved dv/dt capability, high ruggedness - Package - TO-220 2.Drain 1.Gate 3.Source - Ordering Information XT6N60 ①②③④ Designator ① ② ③ Represents Lead Planting Drain-Source Voltage Package Type ④ Packing Type - Pb-free plating product number: 6N60L Symbol L A/B T T R Description L:Lead Free Planting, Blank : Pb/Sn A:600V,B:650V TO-220 Tube Tape Reel Rev.1.0 - May....