Siliup BSS139
60V N-Channel MOSFET
Product Summary V(BR)DSS 60V RDS(on)TYP 2Ω@10V 2.5Ω@4.5V ID 0.22A BSS139 60V N-Channel MOSFET Feature
● We declare that the material of product compliance with RoHS requirements and Halogen Free
● Low threshold voltage,makes it ideal for low voltage applications
● ESD Protected Application
● Direct Logic-Level Interface: TTL/CMOS
● Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.
● Battery Operated Systems
● Solid-State Relays Package Circuit diagram SOT-23 Marking J2 =Device Code Ver-1.2, 2022/01 Shanghai Siliup Semiconductor Technology Co. Ltd. 1 BSS139 60V N-Channel MOSFET Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 0.22 Power Dissipation PD 0.35 Thermal Resistance from Junction to Ambient RθJA 357 Junction Temperature TJ 150 Storage Temperature TSTG -55~ +150 Unit V V A W ℃/W ℃ ℃ Electrical characteristics (TA=25 oC, unless otherwis...
● We declare that the material of product compliance with RoHS requirements and Halogen Free
● Low threshold voltage,makes it ideal for low voltage applications
● ESD Protected Application
● Direct Logic-Level Interface: TTL/CMOS
● Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.
● Battery Operated Systems
● Solid-State Relays Package Circuit diagram SOT-23 Marking J2 =Device Code Ver-1.2, 2022/01 Shanghai Siliup Semiconductor Technology Co. Ltd. 1 BSS139 60V N-Channel MOSFET Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 0.22 Power Dissipation PD 0.35 Thermal Resistance from Junction to Ambient RθJA 357 Junction Temperature TJ 150 Storage Temperature TSTG -55~ +150 Unit V V A W ℃/W ℃ ℃ Electrical characteristics (TA=25 oC, unless otherwis...