SiLM27523N
Overview
The SiLM27523N family of devices are dual-channel, high-speed, low-side gate drivers that can effectively drive MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, SiLM27523N can source and sink high peakcurrent pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay, typically 18 ns.
- Two independent gate drive channels
- 4.5 A peak source and 5.5 A peak sink current drive capability
- Fast propagation delay (18 ns typical)
- Fast rise and fall time (7 ns and 6 ns typical)
- 4.5 to 20V single supply range
- Under-voltage lockout
- TTL and CMOS compatible input logic threshold
- Ability to handle negative voltages (-5V) at inputs
- 2 ns typical delay matching between 2 channels
- Two outputs are paralleled for higher drive current
