GTS15PI120B3H Overview
VGE(th) Gate-Emitter Threshold Voltage VCE(sat) Collector-Emitter Saturation Voltage ICES Collector-Emitter Leakage Current IGES Gate-Emitter Leakage Current Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Conditions IC=1mA,.
GTS15PI120B3H Key Features
- Field Stop Trench Gate IGBT
- Short Circuit Rated >10μs
- Low Saturation Voltage
- Low Switching Loss
- 100% RBSOA Tested(2×Ic)
- Low Stray Inductance
- Lead Free,pliant with RoHS Requirement