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GTS15PI120B3H Datasheet IGBT

Manufacturer: SilverMicro

Overview: GTS15PI120B3H IGBT Module.

General Description

VGE(th) Gate-Emitter Threshold Voltage VCE(sat) Collector-Emitter Saturation Voltage ICES Collector-Emitter Leakage Current IGES Gate-Emitter Leakage Current Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Conditions IC=1mA, VCE=VGE, TJ=25℃ TJ=25℃ IC=15A, VGE=15V TJ=125℃ TJ=150℃ VGE=0V, VCE=VCES, TJ=25℃ VGE=±20V, VCE=0V, TJ=25℃ VCE=25V, VGE=0V, f=100kHz, TJ=25℃ Switching Characteristics td(on) Turn-on Delay Time tr Rise Time VCC=600V, IC=15A, RGon=39Ω, VGE=±15V, Inductive Load td(off) Turn-off Delay Time tf Fall Time VCC=600V, IC=15A, RGoff=39Ω, VGE=±15V, Inductive Load VCC=600V, IC=15A, Eon Turn-on Switching Loss RGon=39Ω, VGE=±15V, di/dt=230A/μs (TJ=150℃) Inductive Load TJ=25℃ TJ=125℃ TJ=150℃ TJ=25℃ TJ=125℃ TJ=150℃ TJ=25℃ TJ=125℃ TJ=150℃ TJ=25℃ TJ=125℃ TJ=150℃ TJ=25℃ TJ=125℃ TJ=150℃ Min.

Typ.

Max.

Key Features

  • Field Stop Trench Gate IGBT.
  • Short Circuit Rated >10μs.
  • Low Saturation Voltage.
  • Low Switching Loss.
  • 100% RBSOA Tested(2×Ic).
  • Low Stray Inductance.
  • Lead Free,Compliant with RoHS Requirement.

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