Datasheet Summary
Apr 2015
SE3035 N-Channel Enhancement-Mode MOSFET
Revision: A
General Description
Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM
- Simple Drive Requirement
- Small Package Outline
- Surface Mount Device
Features
For a single MOSFET
- VDS = 30V
- RDS(ON) = 5.5mΩ @ VGS=10
- RDS(ON) = 9.5mΩ @ VGS=4.5
Pin configurations
See Diagram...