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SE3035 Datasheet N-channel MOSFET

Manufacturer: Sino-IC

Overview: Apr 2015 SE3035 N-Channel Enhancement-Mode MOSFET Revision: A.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device

Key Features

  • For a single MOSFET.
  • VDS = 30V.
  • RDS(ON) = 5.5mΩ @ VGS=10.
  • RDS(ON) = 9.5mΩ @ VGS=4.5 Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Symbol VDS VGS ID PD TJ Rating 30 ±20 35 120 35 -55 to 150 Units V V A W ℃ ShangHai Sino-IC Microelectronic Co. , Ltd. 1. SE3035 Electrical Characteristics (TJ=25℃ unless o.

More Datasheets from Sino-IC

Part Number Description
SE3080A N-Channel MOSFET
SE3080G N-Channel MOSFET
SE3080K N-Channel MOSFET
SE3082G N-Channel MOSFET

SE3035 Distributor