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SE3035 - N-Channel MOSFET

Download the SE3035 datasheet PDF. This datasheet also covers the SE3035-Sino variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Simple Drive Requirement Small Package Outline Surface Mount Device

Key Features

  • For a single MOSFET.
  • VDS = 30V.
  • RDS(ON) = 5.5mΩ @ VGS=10.
  • RDS(ON) = 9.5mΩ @ VGS=4.5 Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Symbol VDS VGS ID PD TJ Rating 30 ±20 35 120 35 -55 to 150 Units V V A W ℃ ShangHai Sino-IC Microelectronic Co. , Ltd. 1. SE3035 Electrical Characteristics (TJ=25℃ unless o.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SE3035-Sino-IC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SE3035
Manufacturer Sino-IC
File Size 612.51 KB
Description N-Channel MOSFET
Datasheet download datasheet SE3035 Datasheet

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Other Datasheets by Sino-IC

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Apr 2015 SE3035 N-Channel Enhancement-Mode MOSFET Revision: A General Description Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device Features For a single MOSFET  VDS = 30V  RDS(ON) = 5.5mΩ @ VGS=10  RDS(ON) = 9.5mΩ @ VGS=4.5 Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Symbol VDS VGS ID PD TJ Rating 30 ±20 35 120 35 -55 to 150 Units V V A W ℃ ShangHai Sino-IC Microelectronic Co., Ltd. 1.