SE6050B Overview
This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of application.
SE6050B Key Features
- VDS = 60V
- RDS(ON) = 11mΩ @ VGS=10V
Datasheet Details
| Part number | SE6050B |
|---|---|
| Datasheet | SE6050B SE6050B-Sino Datasheet (PDF) |
| File Size | 430.10 KB |
| Manufacturer | Sino-IC |
| Description | N-Channel MOSFET |
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