SE6050B - N-Channel MOSFET

Product Overview

Part number	SE6050B
Manufacturer	Sino-IC
File Size	430.10 KB
Description	N-Channel MOSFET
Datasheet	SE6050B Datasheet
Note	This datasheet PDF includes multiple part numbers: SE6050B, SE6050B-Sino. Please refer to the document for exact specifications by model.
Additional preview pages of the SE6050B datasheet.

This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

For a single MOSFET.
VDS = 60V.
RDS(ON) = 11mΩ @ VGS=10V Pin configurations See Diagram below G D S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Derating factor Single pulse avalanche energy Operating Junction Temperature Range TO-252 Symbol VDS VGS ID PD EAS TJ Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Rating 60 ±20 50 220 80 0.53 115 -55 to.

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Published: Feb 22, 2019 |