SE6050B Datasheet N-Channel MOSFET

Manufacturer: Sino-IC

Overview: SE6050B N-Channel Enhancement-Mode MOSFET Revision: A General.

Download the SE6050B datasheet PDF. This datasheet also includes the SE6050B-Sino variant, as both parts are published together in a single manufacturer document.

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SE6050B n-channel mosfet by Sino-IC - Datasheet Preview

Datasheet Details

Part number	SE6050B
Manufacturer	Sino-IC
File Size	430.10 KB
Description	N-Channel MOSFET
Download	SE6050B Download (PDF)

General Description

This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of application

Key Features

For a single MOSFET.
VDS = 60V.
RDS(ON) = 11mΩ @ VGS=10V Pin configurations See Diagram below G D S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Derating factor Single pulse avalanche energy Operating Junction Temperature Range TO-252 Symbol VDS VGS ID PD EAS TJ Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Rating 60 ±20 50 220 80 0.53 115 -55 to.

SE6050B Distributor & Price

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Note: Listings may include related ordering codes published under the same XC62K family.

More Datasheets from Sino-IC

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SE6880A	N-Channel MOSFET