SE6050B
Description
This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of application.
Key Features
- VDS = 60V
- RDS(ON) = 11mΩ @ VGS=10V
- Part: SE6050B
- Description: N-Channel MOSFET
- Category: MOSFET
- Manufacturer: Sino-IC
- Size: 430.10 KB