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SE6880A - N-Channel MOSFET

This page provides the datasheet information for the SE6880A, a member of the SE6880A-Sino N-Channel MOSFET family.

Description

excellent RDS(ON), low gate charge and low operation voltage.

This device is suitable for using as a load switch or in PWM applications.

Simple Drive Requirement Small Package Outline Surface Mount Device

Features

  • For a single MOSFET.
  • VDS = 70V.
  • RDS(ON) = 6.3mΩ @ VGS=10V Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Single Pulse Avalanche Energy Total Power Dissipation @TC=25℃ Operating Junction Temperature Range Symbol VDS VGS ID EAS PD TJ Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case(t≤10s) Rating 70 ±20 80 310 450 150 -55 to 175 Units V V A mJ W ℃ Ty.

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Datasheet preview – SE6880A

Datasheet Details

Part number SE6880A
Manufacturer Sino-IC
File Size 391.81 KB
Description N-Channel MOSFET
Datasheet download datasheet SE6880A Datasheet
Additional preview pages of the SE6880A datasheet.

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Full PDF Text Transcription

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SE6880A N-Channel Enhancement-Mode MOSFET Revision: A General Description Advanced trench technology to provide excellent RDS(ON), low gate charge and low operation voltage. This device is suitable for using as a load switch or in PWM applications.  Simple Drive Requirement  Small Package Outline  Surface Mount Device Features For a single MOSFET  VDS = 70V  RDS(ON) = 6.
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