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SE80100 - N-Channel MOSFET

This page provides the datasheet information for the SE80100, a member of the SE80100-Sino N-Channel MOSFET family.

Datasheet Summary

Description

Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Simple Drive Requirement Small Package Outline Surface Mount Device

Features

  • For a single MOSFET.
  • VDS = 80V.
  • RDS(ON) = 6.8mΩ @ VGS=10 Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Symbol VDS VGS ID PD TJ Rating 80 ±20 100 370 125 -55 to 175 Units V V A W ℃ ShangHai Sino-IC Microelectronic Co. , Ltd. 1. SE80100 Electrical Characteristics (TJ=25℃ unless otherwise noted) Symbol Para.

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Datasheet preview – SE80100

Datasheet Details

Part number SE80100
Manufacturer Sino-IC
File Size 419.86 KB
Description N-Channel MOSFET
Datasheet download datasheet SE80100 Datasheet
Additional preview pages of the SE80100 datasheet.

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    Full PDF Text Transcription

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    Nov 2014 SE80100 N-Channel Enhancement-Mode MOSFET Revision: A General Description Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device Features For a single MOSFET  VDS = 80V  RDS(ON) = 6.8mΩ @ VGS=10 Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Symbol VDS VGS ID PD TJ Rating 80 ±20 100 370 125 -55 to 175 Units V V A W ℃ ShangHai Sino-IC Microelectronic Co., Ltd. 1.
    Published: |