SE80100 Datasheet N-Channel MOSFET

Manufacturer: Sino-IC

Overview: Nov 2014 SE80100 N-Channel Enhancement-Mode MOSFET Revision: A.

Download the SE80100 datasheet PDF. This datasheet also includes the SE80100-Sino variant, as both parts are published together in a single manufacturer document.

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SE80100 n-channel mosfet by Sino-IC - Datasheet Preview

Datasheet Details

Part number	SE80100
Manufacturer	Sino-IC
File Size	419.86 KB
Description	N-Channel MOSFET
Download	SE80100 Download (PDF)

General Description

Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device

Key Features

For a single MOSFET.
VDS = 80V.
RDS(ON) = 6.8mΩ @ VGS=10 Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Symbol VDS VGS ID PD TJ Rating 80 ±20 100 370 125 -55 to 175 Units V V A W ℃ ShangHai Sino-IC Microelectronic Co. , Ltd. 1. SE80100 Electrical Characteristics (TJ=25℃ unless otherwise noted) Symbol Para.

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