Datasheet Summary
®
Dual Enhancement Mode MOSFET (N- and P-Channel)
Features
- N-Channel
20V/0.91A, RDS(ON)= 240mW(max.) @ VGS=4.5V RDS(ON)= 320mW(max.) @ VGS=2.5V
- P-Channel
-12V/-0.86A, RDS(ON)= 290mW(max.) @ VGS=-4.5V RDS(ON)= 400mW(max.) @ VGS=-2.5V RDS(ON)= 530mW(max.) @ VGS=-1.8V
- Reliable and Rugged
- Lead Free and Green Devices Available
(RoHS pliant)
- ESD Protection
Applications
- DC-DC Conversion.
- Load Switching.
- Portable Devices.
Pin Description
S2 G2
D1
D2 G1 S1
Top View of SOT-363
(6)D1
(3)D2
(2) (5) G1 G2
(1)S1
N-Channel
(4)S2
P-Channel
Ordering and Marking Information
SM1620CS
Assembly Material Handling Code Temperature Range Package...
