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SM2217PSQG
®
P-Channel Enhancement Mode MOSFET
Features
• -20V/-9.9A,
R DS(ON)
=
17mΩ(max.)
@
V GS
=-4.5V
RDS(ON) = 25mΩ(max.) @ VGS =-2.5V
RDS(ON) = 40mΩ(max.) @ VGS =-1.8V
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
• HBM ESD protection level pass 2KV
Note : The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered Systems.