Datasheet Summary
®
P-Channel Enhancement Mode MOSFET
Features
- -30V/-50A- ,
RDS(ON) =9.5mW(max.) @ VGS =-10V RDS(ON) =16mW(max.) @ VGS =-4.5V
- Reliable and Rugged
- Lead Free and Green Devices Available
(RoHS pliant)
- 100% UIS + Rg Tested
- HBM ESD protection level pass 8KV
Note : The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
Applications
- Power Management in Notebook puter,
Portable Equipment and Battery Powered Systems.
Ordering and Marking Information
Pin Description
DDDD SS SG DFN3x3D-8_EP
( 5,6,7,8 ) D D DD
(4) G
SSS (1, 2, 3)
P-Channel MOSFET
SM3303PS
Assembly Material Handling Code Temperature...