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SM7342EKKP - Dual N-Channel MOSFET

General Description

G2S1/DS21/D2S1/D2 G1S1/D2D1 D1 (SP2in 9) D1 DFN5x6G-8_EP2 D1 (3) (4) S1/D2 (2)(5)(6)(7) G1 (1) G2 (8) S2 (9) N-Channel MOSFET Ordering and Marking Information SM7342EK Assembly Material Handling Code Temperature Range Package Code Package Code KP : DFN5x6G-8_EP2 Operating Junction Temperat

Key Features

  • Channel 1 (ESD Protection) 30V/67A RDS(ON)=4.3mΩ(max. )@VGS=10V RDS(ON)=7.2mΩ(max. )@VGS=4.5V.
  • Channel 2 (Integrated Schottky diode) 30V/100A RDS(ON)=2mΩ(max. )@VGS=10V RDS(ON)=2.5mΩ(max. )@VGS=4.5V.
  • 100% UIS + Rg Tested.
  • Dual Dies Package and Minimize Board Space.
  • Lower Qg and Qgd for High-Speed Switching.
  • Lower RDS(ON) to Minimize Conduction Losses.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) A.

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Datasheet Details

Part number SM7342EKKP
Manufacturer Sinopower
File Size 889.91 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SM7342EKKP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SM7342EKKP Dual N-Channel Enhancement Mode MOSFET Features • Channel 1 (ESD Protection) 30V/67A RDS(ON)=4.3mΩ(max.)@VGS=10V RDS(ON)=7.2mΩ(max.)@VGS=4.5V • Channel 2 (Integrated Schottky diode) 30V/100A RDS(ON)=2mΩ(max.)@VGS=10V RDS(ON)=2.5mΩ(max.)@VGS=4.5V • 100% UIS + Rg Tested • Dual Dies Package and Minimize Board Space • Lower Qg and Qgd for High-Speed Switching • Lower RDS(ON) to Minimize Conduction Losses • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in Desktop Computer or DC/DC Converters.