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SM8206ACT - Dual N-Channel MOSFET

General Description

G1 D1/D2 G2 S1 D1/D2 S2 Top View of TSOT-23-6 (2) (5) D1 D2

Systems.

Key Features

  • 20V/6A, R= DS(ON) 26mΩ(max. ) @ V= GS 4V R= DS(ON) 36mΩ(max. ) @ V= GS 2.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number SM8206ACT
Manufacturer Sinopower
File Size 276.74 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SM8206ACT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SM8206ACT ® Dual N-Channel Enhancement Mode MOSFET Features • 20V/6A, R= DS(ON) 26mΩ(max.) @ V= GS 4V R= DS(ON) 36mΩ(max.) @ V= GS 2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications Pin Description G1 D1/D2 G2 S1 D1/D2 S2 Top View of TSOT-23-6 (2) (5) D1 D2 • Power Management in Notebook Computer, (6) (4) Portable Equipment, and Battery Powered G1 G2 Systems.