Datasheet Summary
®
Dual N-Channel Enhancement Mode MOSFET
Features
- 20V/6A,
R= DS(ON)
26mΩ(max.)
@
V= GS
4V
R= DS(ON)
36mΩ(max.)
@
V= GS
2.5V
- Super High Dense Cell Design
- Reliable and Rugged
- Lead Free and Green Devices Available
(RoHS pliant)
Applications
Pin Description
G1 D1/D2 G2
S1 D1/D2 S2
Top View of TSOT-23-6
(2) (5) D1 D2
- Power Management in Notebook puter, (6) (4)
Portable Equipment, and Battery Powered
G1 G2
Systems.
Ordering and Marking Information
S1 S2 (1)...