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HUR2X60-100 Datasheet High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

Manufacturer: Sirectifier Semiconductors

Overview: HUR2x60-100, HUR2x60-120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227(ISOTOP) Dim. A B C D E F G H J K L M N O Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08 www.DataSheet4U.com HUR2x60-100 HUR2x60-120 VRSM V 1000 1200 VRRM V 1000 1200 P Q R S T U V W Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL Md Weight TC=25oC 50/60Hz, RMS _ IISOL<1mA Test Conditions TC=80oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=16A; L=180uH VA=1.25.VR typ.; f=10kHz; repetitive o Maximum Ratings 100 60 800 28 1.6 -40...+150 150 -40...+150 200 2500 1.1-1.5/9-13 1.1-1.5/9-13 30 Unit A A mJ A o C W V~ Nm/lb.in. g mounting torque (M4) terminal connection torque (M4) typical HUR2x60-100, HUR2x60-120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=60A; TVJ=125oC TVJ=25oC Test Conditions Characteristic Values typ. max. 1 4 1.70 2.42 0.6 0.1 Unit IR VF www.DataSheet4U.

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Datasheet Details

Part number HUR2X60-100
Manufacturer Sirectifier Semiconductors
File Size 301.97 KB
Description High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Download HUR2X60-100 Download (PDF)

Key Features

  • International standard package miniBLOC.
  • Isolation voltage 2500 V~.
  • 2 independent FRED in 1 package.
  • Planar passivated chips.
  • Very short recovery time.
  • Extremely low switching losses.
  • Low IRM-values.
  • Soft recovery behaviour.

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