HUR830S Overview
HUR830S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode C(TAB) A A NC .. A=Anode, Dimensions TO-263(D2PAK) C Dim. A A1 b b2 c c2 D D1 Millimeter Min.
HUR830S Key Features
- International standard package
- Planar passivated chips
- Very short recovery time
- Extremely low switching losses
- Low IRM-values
- Soft recovery behaviour
HUR830S Applications
- Antiparallel diode for high frequency switching devices