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MBR10200 Datasheet Schottky Barrier Rectifiers

Manufacturer: Sirectifier Semiconductors

Overview: MBR10150 thru MBR10200 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 A=Anode, C=Cathode, TAB=Cathode www.DataSheet4U.com MBR10150 MBR10200 VRRM V 150 200 VRMS V 105 140 VDC V 150 200 Symbol IFAV IFSM IAR (dv/dt)cr TVJ TVJM Tstg Md Weight mounting torque typical o Test Conditions TC=125 C; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine VA=1.5.VRRM typ.; f=10kHz; repetitive Maximum Ratings 10 150 0.8 10000 -65...+150 150 -65...+175 0.4...0.6 2 Unit A A A V/us o C Nm g Symbol TVJ=25oC; VR=VRRM TVJ=125oC; VR=VRRM IF=10A; TVJ=125oC IF=10A; TVJ=25oC IF=20A; TVJ=125oC IF=20A; TVJ=25oC Test Conditions Characteristic Values typ. max. 1.0 50 0.80 0.90 0.90 1.00 2.

Key Features

  • International standard package.
  • Very low VF.
  • Extremely low switching losses.
  • Low IRM-values.

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