MBR540 - Schottky Barrier Rectifiers

Sirectifier Semiconductors

Key Features

Metal of silicon rectifier, majority carrier conducton.
Guard ring for transient protection.
Low power loss, high efficiency.
High current capability, low VF.
High surge capacity.
For use in low voltage, high frequency inverters, free whelling, and polarity protection.

MBR540 schottky barrier rectifiers by Sirectifier Semiconductors - Datasheet Preview

Datasheet Details

Part number	MBR540
Manufacturer	Sirectifier Semiconductors
File Size	159.08 KB
Description	Schottky Barrier Rectifiers
Datasheet	MBR540 Datasheet

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Full PDF Text Transcription (Reference)

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MBR540 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q A=Anode, C=Cathode, TAB=Cathode VRRM V 40 VRMS V 28 VDC V 40 MBR540 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol I(AV) IFSM VF IR CJ ROJC TJ TSTG Characteristics Maximum Average Forward Rectified Current @TC=95oC Maximum Ratings 5 175 0.55 @TJ=25 C @TJ=100oC o Unit A A V mA pF o Peak Forward Surge Current 8.