MBR850 - Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

Sirectifier Semiconductors

Key Features

Metal of silicon rectifier, majority carrier conducton.
Guard ring for transient protection.
Low power loss, high efficiency.
High current capability, low VF.
High surge capacity.
For use in low voltage, high frequency inverters, free whelling, and polarity protection.

MBR850 wide temperature range and high tjm schottky barrier rectifiers by Sirectifier Semiconductors - Datasheet Preview

Datasheet Details

Part number	MBR850
Manufacturer	Sirectifier Semiconductors
File Size	111.26 KB
Description	Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Datasheet	MBR850 Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com MBR850 thru MBR860 Dimensions TO-220AC A C Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers C(TAB) A C A=Anode, C=Cathode, TAB=Cathode VRRM V 50 60 VRMS V 35 42 VDC V 50 60 MBR850 MBR860 Symbol I(AV) IFSM dv/dt VF Characteristics Maximum Average Forward Rectified Current @TC=125oC Maximum Ratings 8 150 10000 IF=8A @TJ=125oC IF=8A @TJ=25oC IF=16A @TJ=25oC @TJ=25oC @TJ=125oC 0.70 0.