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MBR860 - Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

Download the MBR860 datasheet PDF. This datasheet also covers the MBR850 variant, as both devices belong to the same wide temperature range and high tjm schottky barrier rectifiers family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Metal of silicon rectifier, majority carrier conducton.
  • Guard ring for transient protection.
  • Low power loss, high efficiency.
  • High current capability, low VF.
  • High surge capacity.
  • For use in low voltage, high frequency inverters, free whelling, and polarity protection.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBR850_SirectifierSemiconductors.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBR860
Manufacturer Sirectifier Semiconductors
File Size 111.26 KB
Description Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Datasheet download datasheet MBR860 Datasheet

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Other Datasheets by Sirectifier Semiconductors

Part Number Description
MBR850 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
MBR10150 Schottky Barrier Rectifiers
MBR10150CT Schottky Barrier Diodes
MBR10200 Schottky Barrier Rectifiers
MBR10200CT Schottky Barrier Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com MBR850 thru MBR860 Dimensions TO-220AC A C Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers C(TAB) A C A=Anode, C=Cathode, TAB=Cathode VRRM V 50 60 VRMS V 35 42 VDC V 50 60 MBR850 MBR860 Symbol I(AV) IFSM dv/dt VF Characteristics Maximum Average Forward Rectified Current @TC=125oC Maximum Ratings 8 150 10000 IF=8A @TJ=125oC IF=8A @TJ=25oC IF=16A @TJ=25oC @TJ=25oC @TJ=125oC 0.70 0.