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MUR20100 - (MUR20100 / MUR20120) Ultra Fast Recovery Diodes

Key Features

  • International standard package.
  • Glass passivated chips.
  • Very short recovery time.
  • Extremely low losses at high switching frequencies.
  • Low IRM-values.
  • Soft recovery behaviour.

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Datasheet Details

Part number MUR20100
Manufacturer Sirectifier Semiconductors
File Size 121.88 KB
Description (MUR20100 / MUR20120) Ultra Fast Recovery Diodes
Datasheet download datasheet MUR20100 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MUR20100, MUR20120 Ultra Fast Recovery Diodes Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q www.DataSheet4U.com A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 VRRM V 1000 1200 MUR20100 MUR20120 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol IFRMS IFAVM IFRM Test Conditions TVJ=TVJM TC=85oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.