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S3PDB50 Datasheet Three Phase Rectifier Modules

Manufacturer: Sirectifier Semiconductors

Overview: S3PDB50 Three Phase Rectifier Modules _ Dimensions in mm (1mm=0.0394") 2.5 + Type S3PDB50N08 S3PDB50N12 S3PDB50N14 S3PDB50N16 S3PDB50N18 VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 M5x10 7 72 60 54 2.5 20 18 20 2.5 www.DataSheet4U.com + – 21.6 5.3 + 10 ~~~ 23 48 Symbol Idav Idav Test Conditions TC=110oC, module TA=45oC (RthCA=0.6K/W), module TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine Maximum Ratings 50 40 460 500 420 460 1270 1270 1040 1040 -40...+150 150 -40...+125 Unit A IFSM It 2 A2s TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA t=1min t=1s 2500 3000 _ 15% 5+ _ 15% 5+ 160 Mounting torque (M5) Terminal connection torque (M5) typ. Nm g 5.3 13.3 42 ~ ~ ~ 3 ~ ~ ~ A o C V~ 30 S3PDB50 Three Phase Rectifier Modules Symbol IR VF VTO www.DataSheet4U.com Test Conditions VR=VRRM; TVJ=25 C VR=VRRM; TVJ=TVJM IF=150A; TVJ=25oC For power-loss calculations only TVJ=TVJM per diode per module per diode per module Creeping distance on surface Creepage distance in air Max. allowable acceleration o Characteristic Values _ 0.3 < _5 < _ 1.8 < 0.8 8 1.45 0.24 1.87 0.31 10 9.

Key Features

  • Package with screw terminals.
  • Isolation voltage 3000 V~.
  • Planar passivated chips.
  • Blocking voltage up to 1800 V.
  • Low forward voltage drop.

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